4 results
High-k Materials for Advanced Gate Stack Dielectrics: a Comparison of ALCVD and MOCVD as Deposition Technologies
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- Journal:
- MRS Online Proceedings Library Archive / Volume 765 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, D2.6
- Print publication:
- 2003
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Effect of Al-content and Post Deposition Annealing on the Electrical Properties of Ultra-thin HfAlxOy Layers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 745 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, N2.3
- Print publication:
- 2002
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The Influence of Defects on Compatibility and Yield of the HfO2-PolySilicon Gate Stack for CMOS Integration
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- Journal:
- MRS Online Proceedings Library Archive / Volume 747 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, T6.7/N8.7
- Print publication:
- 2002
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- Article
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The Influence of Defects on Compatibility and Yield of the HfO2-PolySilicon Gate Stack for CMOS Integration
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 745 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, N8.7/T6.7
- Print publication:
- 2002
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- Article
- Export citation